Type 2N2484
Geometry 0220 /
0307
Polarity NPN
Qual Level: Pending
Data Sheet No. 2N2484
Generic Part Number:
2N2484
REF: MIL-PRF-19500/376
Features:
General-purpose high gain, low
power transistor which operates
over a wide temperature range.
Housed in a
TO-18
case.
Also available in chip form using
the 0220 /
0307
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/376
which
Semicoa meets in all cases.
Rating
Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
60
V
Collector-Base Voltage
V
CBO
60
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current, Continuous
I
C
50
mA
Operating Junction Temperature
T
J
-65 to +200
o
C
Storage Temperature
T
STG
-65 to +200
o
C
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
TO-18
Data Sheet No. 2N2484
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 10 A
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 A
Collector-Base Cutoff Current
V
CB
= 45 V
I
CBO1
---
5
nA
V
CB
= 45 V, T
A
= +150
o
C
I
CBO2
---
10
A
Emitter-Base Cutoff Current
V
EB
= 5.0 V
Collector-Emitter Cutoff Current
V
CE
= 5 V
I
CEO
---
2
nA
V
CE
=45 V
I
CES
---
5
nA
---
2
V
(BR)CEO
60
---
V
(BR)EBO
6.0
---
nA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
V
(BR)CBO
60
---
I
EBO
ON Characteristics
Symbol
Min
Max
Unit
DC Current Gain
I
C
= 1 A, V
CE
= 5 V
h
FE1
45
---
---
I
C
= 10 A, V
CE
= 5 V
h
FE2
200
500
---
I
C
= 100 A, V
CE
= 5 V
h
FE3
225
675
---
I
C
= 500 A, V
CE
= 5 V
h
FE4
250
800
---
I
C
= 1 mA, V
CE
= 5 V
h
FE5
250
800
---
I
C
= 10 mA, V
CE
= 5 V (pulsed)
h
FE6
225
800
---
I
C
= 10 A, V
CE
= 5 V, T
A
= -55
o
C
h
FE7
35
---
---
Collector-Emitter Saturation Voltage Saturated
I
C
= 150 mA, I
B
= 100 A
V
CE(sat)
---
0.3
V dc
Base-Emitter Saturation Voltage Non Saturated
V
CE
= 5 V, I
C
= 100 A
V
BE
0.5
0.7
V dc
Data Sheet No. 2N2484
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Short-Circuit
Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 50 A, f = 5 MHz
|h
FE
|1
3.0
---
---
V
CE
= 5 V, I
C
= 500 A, f = 30 MHz
|h
FE
|2
2.0
7.0
---
Open Circuit Output Admittance
V
CE
= 5 V, I
C
= 1 mA, f = 1 kHz
Open-Circuit, Reverse Voltage Transfer Ratio
V
CE
= 5 V, I
C
= 1 mA, f = 1 kHz
Short-Circuit Input Impedance
V
CE
= 5 V, I
C
= 1 mA, f = 1 kHz
Short Circuit Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 1 mA, f = 1 kHz
Open Circuit Output Capacitance
V
CB
= 5 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Noise Figure
f = 100 Hz, V
CE
= 5 V, I
C
= 10 A, Rg = 10 kohm
F1
---
7.5
dB
f = 1 kHz, V
CE
= 5 V, I
C
= 10 A, Rg = 10 kohm
F2
---
3
dB
f = 10 kHz, V
CE
= 5 V, I
C
= 10 A, Rg = 10 kohm
F3
---
2
dB
f = 10 Hz to 15.7 kHz, V
CE
= 5 V, I
C
= 10 A,
F4
---
3
dB
Rg = 10 kohm (wideband noise)
C
IBO
---
6.0
pF
h
RE
---
8x10
-4
---
h
IE
3.5
24
ohms
h
FE
250
900
---
hoe
---
40
ohms
C
OBO
---
5.0
pF
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